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Branding

Samsung Hynix Kioxia Micron Nanya SanDisk
Product Category

DRAM SSD eMMC eMCP FLASH UFS

PRODUCT MODEL

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model	DRAM type	capacity	framework	speed	working voltage	operation temperature	product details
KLUDG8J1ZD-C0CQ	KLUDG8J1ZD-C0CQ	UFS	SAMSUNG/三星	128GB			1.8/3.3V	-40℃~105℃	BGA	Mass Production	11.5mm x 13mm x 1.2mm	2.1	G3 2Lane	Click view
KLUCG4J1ZD-C0CP	KLUCG4J1ZD-C0CP	UFS	SAMSUNG/三星	128GB			1.8/3.3V	-40°C~95°C	BGA	Mass Production	11.5mm x 13mm x 1.2mm	2.1	G3 2Lane	Click view
KLUCG4J1ZD-C0CQ	KLUCG4J1ZD-C0CQ	UFS	SAMSUNG/三星	32GB			1.8/3.3V	-40°C~95°C	BGA	Mass Production	11.5mm x 13mm x 1.2mm	2.1	G3 2Lane	Click view
KLMCG4JEUD-B04P	KLMCG4JEUD-B04P	eMMC	SAMSUNG/三星	64GB			1.8/3.3V	-40℃~85℃	BGA	Mass Production	11.5mm x 13mm x 1.2mm	5.1	HS400	Click view
KLMBG4GEUF-B04Q	KLMBG4GEUF-B04Q	eMMC	SAMSUNG/三星	32GB			1.8/3.3V	-40℃~105℃	BGA	Mass Production	11.5mm x 13mm x 0.8mm	5.1	HS400	Click view
KLM8G1GEUF-B04Q	KLM8G1GEUF-B04Q	eMMC	SAMSUNG/三星	8GB			1.8/3.3V	-40℃~105℃	BGA	Mass Production	11.5mm x 13mm x 0.8mm	5.1	HS400	Click view
K4UJE3Q4AA-TFCL	K4UJE3Q4AA-TFCL	DRAM LPDDR4X	SAMSUNG/三星	48Gb	x32	4266Mbps	1.8/1.1/0.6V	-40°C~95°C	FBGA-200	Mass Production				Click view
K4UJE3Q4AA-THCL	K4UJE3Q4AA-THCL	DRAM LPDDR4X	SAMSUNG/三星	48Gb	x32	4266Mbps	1.8/1.1/0.6V	-40℃~105℃	FBGA-200	Mass Production				Click view
K4UBE3D4AM-TFCL	K4UBE3D4AM-TFCL	DRAM LPDDR4X	SAMSUNG/三星	32Gb	x32	4266Mbps	1.8/1.1/0.6V	-40°C~95°C	FBGA-200	Mass Production				Click view
K4UBE3D4AM-THCL	K4UBE3D4AM-THCL	DRAM LPDDR4X	SAMSUNG/三星	32Gb	x32	4266Mbps	1.8/1.1/0.6V	-40℃~105℃	FBGA-200	Mass Production				Click view
K4FBE3D4HM-TFCL	K4FBE3D4HM-TFCL	DRAM LPDDR4	SAMSUNG/三星	32Gb	x32	4266Mbps	1.8/1.1/1.1V	-40°C~95°C	FBGA-200	Mass Production				Click view
K4FBE3D4HM-GFCL	K4FBE3D4HM-GFCL	DRAM LPDDR4	SAMSUNG/三星	32Gb	x32	3733Mbps	1.8/1.1/1.1V	-40°C~95°C	FBGA-200	Mass Production				Click view
K4FBE3D4HM-THCL	K4FBE3D4HM-THCL	DRAM LPDDR4	SAMSUNG/三星	32Gb	x32	4266Mbps	1.8/1.1/1.1V	-40℃~105℃	BGA	Mass Production				Click view
K4FHE3D4HA-TFCL	K4FHE3D4HA-TFCL	DRAM LPDDR4	SAMSUNG/三星	24Gb	x32	4266Mbps	1.8/1.1/1.1V	-40°C~95°C	FBGA-200	Mass Production				Click view
K4FHE3D4HA-GFCL	K4FHE3D4HA-GFCL	DRAM LPDDR4	SAMSUNG/三星	24Gb	x32	4266Mbps	1.8/1.1/1.1V	-40°C~95°C	FBGA-200	Mass Production				Click view
K4FHE3D4HA-THCL	K4FHE3D4HA-THCL	DRAM LPDDR4	SAMSUNG/三星	24Gb	x32	4266Mbps	1.8/1.1/1.1V	-40°C~95°C	FBGA-200	Mass Production				Click view
K4F6E3S4HM-TFCL	K4F6E3S4HM-TFCL	DRAM LPDDR4	SAMSUNG/三星	16Gb	x32	4266Mbps	1.8/1.1/1.1V	-40°C~95°C	FBGA-200	Mass Production				Click view
K4F6E3S4HM-THCL	K4F6E3S4HM-THCL	DRAM LPDDR4	SAMSUNG/三星	16Gb	x32	4266Mbps	1.8/1.1/1.1V	-40℃~105℃	FBGA-200	Mass Production				Click view
K4F8E3S4HD-GHCL	K4F8E3S4HD-GHCL	DRAM LPDDR4	SAMSUNG/三星	8Gb	x32	4266Mbps	1.8/1.1/1.1V	-40℃~105℃	FBGA-200	Mass Production				Click view
K4B4G1646D-BFMA	K4B4G1646D-BFMA	DRAM DDR3	SAMSUNG/三星	4Gb	256Mx16	1866Mbps	1.35V	-40°C~95°C	FBGA-96	Mass Production				Click view